In stock STGWA80H65DFB IGBT Transistor Single 120A 650V 469W DIP TO-247 GWA80H65DFB 80H65 (Пакистан - Тендер #41504266)

Td (on/off) ****25�C:84ns/280ns
Reverse Recovery Time (trr):85 ns
Test Condition:400V 80A 10Ohm 15V
Switching Energy:2.1mJ (on) 1.5mJ (off)
Supplier Type:Other
Media Available:Other
Mounting Type:Through Hole
FET Feature:Silicon Carbide (SiC)
Configuration:Single
Series:other
Description:other
Type:Other
D/C:new
Package Type:MOSFET
Application:IGBT Transistor
Cross Reference:other
Current - Collector (Ic) (Max):120A
Voltage - Collector Emitter Breakdown (Max):650V
Vce Saturation (Max) ****Ib, Ic:N/A
Current - Collector Cutoff (Max):240A
DC Current Gain (hFE) (Min) ****Ic, Vce:N/A
Power - Max:469W
Frequency - Transition:2.1mJ (on) 1.5mJ (off)
Operating Temperature:-55�C ~ 175�C (TJ)
Package / Case:TO-247AD
Resistor - Base (R1):other
Resistor - Emitter Base (R2):other
FET Type:MOSFET
Drain to Source Voltage (Vdss):other
Current - Continuous Drain (Id) ****25�C:other
Rds On (Max) ****Id, Vgs:other
Vgs(th) (Max) ****Id:other
Gate Charge (Qg) (Max) ****Vgs:414 nC
Input Capacitance (Ciss) (Max) ****Vds:Standard
Frequency:2.1mJ (on) 1.5mJ (off)
Current Rating (Amps):other
Noise Figure:other
Power - Output:other
Voltage - Rated:other
Drive Voltage (Max Rds On, Min Rds On):10V
Vgs (Max):�20V
IGBT Type:Trench Field Stop
Vce(on) (Max) ****Vge, Ic:2V ****15V 80A
Input Capacitance (Cies) ****Vce:Standard
Input:Standard
NTC Thermistor:other
Voltage - Breakdown (V(BR)GSS):other
Current - Drain (Idss) ****Vds (Vgs=0):other
Current Drain (Id) - Max:other
Voltage - Cutoff (VGS off) ****Id:other
Resistance - RDS(On):other
Voltage:650V
Voltage - Output:other
Voltage - Offset (Vt):other
Current - Gate to Anode Leakage (Igao):other
Current - Valley (Iv):other
Current - Peak:other
Applications:IGBT Transistor

Country: Pakistan

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